optocoupler, phototransistor output, with base connection, 110 c rated www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83876 200 rev. 1.4, 07-may-08 cny117 vishay semiconductors description the cny117 is a 110 c rated optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in dip-6 package. the coupling device is suitable for signal transmission between two electrically sepa rated circuits. the potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. features ? operating temperature from - 55 c to + 110 c ? breakdown voltage, 5300 v rms ? long term stability ? industry standard dual-in-line package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? ac adapter ?smps ?plc ? factory automation ? game consoles agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-5 ? cul - file no. e52744, equivalent to csa bulletin 5a note for additional information on the availabl e options refer to option information. i179004 1 2 3 6 5 4 b c e a c n c order information part remarks cny117-1 ctr 40 to 80 %, dip-6 cny117-2 ctr 63 to 125 %, dip-6 cny117-3 ctr 100 to 200 %, dip-6 cny117-4 ctr 160 to 320 %, dip-6 absolute maximum ratings parameter test condition symbol value unit input reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t 10 s i fsm 2.5 a power dissipation p diss 100 mw derate linearly from 25 c 1.0 mw/c output collector emitter breakdown voltage bv ceo 70 v collector current i c 50 ma t 1.0 ms i c 100 ma total power dissipation p diss 150 mw derate linearly from 25 c 1.5 mw/c
document number: 83876 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 07-may-08 201 cny117 optocoupler, phototransistor output, with base connecti on, 110 c rated vishay semiconductors note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time can adversely affect reliability. note t amb = 25 c, unless otherwise specified. minimum and maximum values were tested requier ements. typical values are characteristic s of the device and are the result of en gineering evaluations. typical values are for information onl y and are not part of the testing requirements. coupler isolation test voltage between emitter and detector referred to standard climate 23/50 din 50014 v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v r io 10 11 storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 110 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c absolute maximum ratings parameter test condition symbol value unit electrical characteristcs parameter test condition part symbol min. typ. max. unit input forward voltage i f = 60 ma v f 1.25 1.65 v breakdown voltage i r = 10 a v br 6v reverse current v r = 6 v i r 0.01 10 a capacitance v r = 0 v, f = 1 mhz c o 25 pf output collector emitter capacitance v ce = 5 v, f = 1 mhz c ce 5.2 pf base collector capacitance v ce = 5 v, f = 1 mhz c bc 6.5 pf emitter base capacitance v ce = 5 v, f = 1 mhz c eb 7.5 pf coupler collector emitter, saturation voltage i f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v coupling capacitance c c 0.6 pf collector emitter, leakage current v ce = 10 v cny117-1 i ceo 2.0 50 na cny117-2 i ceo 2.0 50 na cny117-3 i ceo 5.0 100 na cny117-4 i ceo 5.0 100 na
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83876 202 rev. 1.4, 07-may-08 cny117 vishay semiconductors optocoupler, phototransistor output, with base connection, 110 c rated note current transfer ratio i c /i f at v ce = 5.0 v, 25 c and collector emitter leakage current by dash number. current transfer ratio parameter test condition part symbol min. typ. max. unit current transfer ratio i f = 10 ma cny117-1 ctr 40 80 % cny117-2 ctr 63 125 % cny117-3 ctr 100 200 % cny117-4 ctr 160 320 % i f = 1.0 ma cny117-1 ctr 13 30 % cny117-2 ctr 22 45 % cny117-3 ctr 34 70 % cny117-4 ctr 56 90 % switching characteristics parameter test condition part symbol min. typ. max. unit linear operation (without saturation) turn-on time i f = 10 ma, v cc = 5.0 v, r l = 75 t on 3.0 s rise time i f = 10 ma, v cc = 5.0 v, r l = 75 t r 2.0 s turn-off time i f = 10 ma, v cc = 5.0 v, r l = 75 t off 2.3 s fall time i f = 10 ma, v cc = 5.0 v, r l = 75 t f 2.0 s cut-off frequency i f = 10 ma, v cc = 5.0 v, r l = 75 f co 250 khz switching operation (with saturation) turn-on time i f = 20 ma cny117-1 t on 3.0 s i f = 10 ma cny117-2 t on 4.2 s cny117-3 t on 4.2 s i f = 5.0 ma cny117-4 t on 6.0 s rise time i f = 20 ma cny117-1 t r 2.0 s i f = 10 ma cny117-2 t r 3.0 s cny117-3 t r 3.0 s i f = 5.0 ma cny117-4 t r 4.6 s turn-off time i f = 20 ma cny117-1 t off 18 s i f = 10 ma cny117-2 t off 23 s cny117-3 t off 23 s i f = 5.0 ma cny117-4 t off 25 s fall time i f = 20 ma cny117-1 t f 11 s i f = 10 ma cny117-2 t f 14 s cny117-3 t f 14 s i f = 5.0 ma cny117-4 t f 15 s
document number: 83876 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 07-may-08 203 cny117 optocoupler, phototransistor output, with base connecti on, 110 c rated vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - permissible power diss ipation vs. ambient temperature fig. 2 - forward voltage vs. forward current fig. 3 - collector current vs. collector emitter voltage fig. 4 - collector to emitter dark current vs. ambient temperature fig. 5 - normalized current vs. collector emitter saturation voltage fig. 6 - normalized current transfe r ratio vs. ambient temperature 0 25 50 75 100 125 150 175 0204060 8 0 100 120 1 8 777 p - po w er dissipation (m w ) tot detector led t - am b ient temperat u re (c) am b 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.10 1.00 10.00 100.00 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.10 1.00 10.00 100.00 i f - for w ard c u rrent (ma) 17577 v - for w ard v oltage ( v ) f 110 c 0 c 50 c 25 c - 55 c 0 5 10 15 20 25 30 35 40 45 50 01 4 8 10 11 12 13 14 15 v - collector emitter v oltage ( v ) 1 8 733 i - collector c u rrent (ma) c ce i = 30 ma i = 1 ma i = 5 ma i = 10 ma i = 15 ma i = 20 ma f f f f f f 23 67 5 9 0.10 1 10 100 1000 10000 - 75 - 25 25 75 125 t - am b ient temperat u re (c) 1 8 734 ce0 i(na) am b 40 v 12 v 24 v 0 10 20 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v - collector to emitter v oltage ( v ) 1 8 735 i (ma) 5 ma 1 ma c ce 25 ma 2 ma 10 ma 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 - 55 - 35 - 15 5 25 45 65 8 5 105 125 t am b - am b ient temperat u re (c) 1757 8 ctr - n ormalized o u tp u t c u rrent n ormalized to i f = 10 ma, t am b = 25 c, v ce = 0.4 v , sat u rated n orm i f = 10 ma 5 ma 1 ma
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83876 204 rev. 1.4, 07-may-08 cny117 vishay semiconductors optocoupler, phototransistor output, with base connection, 110 c rated fig. 7 - normalized current transfer ratio vs. ambient temperature fig. 8 - normalized ctr vs. forward current fig. 9 - normalized ctr vs. forward current fig. 10 - cut-off frequency vs. collector current fig. 11 - time switching vs. load resistance fig. 12 - time switching vs. load resistance 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 - 55 - 35 - 15 5 25 45 65 8 5 105 125 t am b - am b ient temperat u re (c) 17579 ctr - n ormalized o u tp u t c u rrent n ormalized to i f = 10 ma, t am b = 25 c, v ce = 5 v , non-sat u rated n orm i f = 10 ma 5 ma 1 ma 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.10 1.00 10.00 100.00 i f - for w ard c u rrent (ma) 175 8 0 ctr - n ormalized o u tp u t c u rrent n orm n ormalized to i f = 10 ma, t am b = 25 c, v ce = 5 v , non-sat u rated - 4 - 1 - 3 - 2 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.10 1.00 10.00 100.00 i f - for w ard c u rrent (ma) 175 8 4 - 4 - 1 - 3 - 2 ctr - n ormalized o u tp u t c u rrent n orm n ormalized to i f = 10 ma, t am b = 25 c, v ce = 0.4 v , sat u rated 1.00 10.00 100.00 1000.00 0.10 1.00 10.00 100.00 i c - collector c u rrent (ma) 175 8 3 fctr - c u t-off fre qu ency (khz) 25 c 0 c 50 c 25 c 0 c 50 c c n y-1, -2 c n y-3,-4 t am b = 25 c, v ce = 5 v , non-sat u rated 1 10 100 1000 0.1 1 10 100 r - load resistance (k ) 1 8 7 8 0 s w itching time ( s) p u lse w idth = 100 ms i = 10 ma d u ty cycle = 50 % l t off t on f 1 10 100 1000 0.1 1 10 100 r - load resistance (k ) 1 8 7 8 1 s w itching time ( s) rise fall p u lse w idth = 100 ms i = 10 ma d u ty cycle = 50 % l t t f
document number: 83876 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 07-may-08 205 cny117 optocoupler, phototransistor output, with base connecti on, 110 c rated vishay semiconductors fig. 13 - switching time vs. base emitter resistance fig. 14 - switching time vs. i f fig. 15 - normalized h fe vs. base current fig. 16 - normalized h fe vs. base current fig. 17 - normalized photocurrent vs. forward current 1 10 10 100 1000 10000 log r - base emitter resistance ( ) 1 8 7 8 2 log t - s w itching time ( s) t at i = 10 ma t at i = 10 ma p u lse w itdh = 100 ms i = 10 ma r = 1000 d u ty cycle = 50 % on/off be on f off f f l 8 2 3 4 5 6 7 9 0 2 4 6 8 10 12 14 16 0 5 10 15 20 i f (ma) s w itching time ( s) 19274 ce am b r be = 500 k , v = 5 v , t = 25 c t on t off 0.7 0. 8 0.9 1.0 1.1 1.2 0.10 1.00 10.00 100.00 i b - base c u rrent (ma) 175 8 1 n ormalized h fe n ormalized to i b = 20 a, t am b = 25 c, v ce = 5 v , non-sat u rated 110 c 0 c 50 c 25 c - 55 c 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.01 0.10 1.00 10.00 100.00 i b - base c u rrent (ma) 175 8 2 n ormalized h fe n ormalized to i b = 20 a, t am b = 25 c, v ce = 0.4 v , sat u rated 110 c 0 c 50 c 25 c - 55 c 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 i - for w ard c u rrent (ma) 1 8 7 8 6 n ormalized photoc u rrent 0 c 25 c 50 c 75 c f n ormalized to i = 10 ma temp = 25 c and f ce v = 5 v
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83876 206 rev. 1.4, 07-may-08 cny117 vishay semiconductors optocoupler, phototransistor output, with base connection, 110 c rated package dimensions in inches (millimeters) i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83876 207 rev. 1.4, 07-may-08 cny117 vishay semiconductors optocoupler, phototransistor output, with base connection, 110 c rated ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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